超洁净石墨烯薄膜
Superclean Graphene Film on Cu Foil
超洁净石墨烯薄膜（Cu-P1-C4）解决了石墨烯高温CVD生长过程中的本征碳污染的问题，相比于常规CVD石墨烯，超洁净石墨烯具有更高的透光性，更高的迁移率，更低的接触电阻，更快的界面电荷转移性能以及更良好的亲水性，是研究石墨烯本征物理化学性质、探索高端器件应用、以及制定检测标准的理想样品。
Superclean graphene film was obtained by eliminating the contamination formed during the process of high temperature chemical vapor deposition (CVD) growth of graphene. Compared with the graphene grown by common methods, superclean graphene exhibits higher transmittance, higher carrier mobility, lower contact resistance, faster interface charge transfer performance and better hydrophilicity properties, thereby providing a perfect material platform for studying the intrinsic properties of graphene, exploring high-end optoelectronic applications developing testing standards, etc.
A3尺寸石墨烯薄膜
Large Area Monolayer Graphene on Cu Foil
A3尺寸石墨烯薄膜是BGl通用石墨烯薄膜的明星产品。其最大尺寸为29.7×42 （cm²）、石墨烯畴区达500μm，石墨烯质量高、无缺陷、单晶化程度高。产能可达3万片/年，产品性能稳定，可持续供货。其具有柔性、高透过率、高导电性等特点，可广泛应用于柔性显示、电子器件、传感器、超级铜、光电、生物医学等应用领域。
Large-area graphene is one of BGI's flagship products. This defect-free, high-quality graphene, has high degree of monocrystalization. The maximum product size is 297 mm × 420 mm, and the grain size is as high as 500 μm. The production capacity can reach to 30,000 pieces per year, with stable product performance and sustainable supply. Depending on its high transmittance and high conductivity, it can be widely used in applications such as flexible displays, electronic devices, sensors, super copper, and biomedical engineering
石墨烯薄膜系列
| 类 别 | 牌号 | 特 征 | 尺寸 |
| 单晶石墨烯薄膜 | Cu-S | 1.单晶铜箔外延生长单晶石墨烯 Single-crystal monolayer graphene grown on single crystal Cu foil | 2×2 |
2.铜箔厚度∶20-50μm Thickness of Cu foil: 20-50 μm | |||
3.晶面∶Cu（111） Crystal orientation: Cu(111) | 5×5 | ||
4.石墨烯覆盖度∶>99% Coverage: > 99% | |||
5.石墨烯单层率∶>95% Monolayer rate: > 95% | 10×10 | ||
6.面电阻∶300-400 Ω/sq（SiO2/Si衬底） Sheet resistance on SiO2/Si substrate: 300-400 Ω/sq | |||
| 多晶石墨烯薄膜 | Cu-P1-C4 | 1.洁净度∶>70% Cleanness: >70% | 2×2 |
2.铜箔厚度∶25μm Thickness of Cu foil: 25 μm | |||
3.石墨烯覆盖度∶> 99% Coverage: > 99% | 5×5 | ||
4.石墨烯单层率∶>90% Monolayer rate: > 90% | |||
5.面电阻∶300-400 Ω/sq（SiO2/Si衬底） Sheet resistance on SiO2/Si substrate: 300-400 Ω/sq | 10×10 | ||
| Cu-P25 | 1.最大铜单晶畴区尺寸Cuds∶Cuds>25cm² Highest Cu grain sizes Cuds: Cuds > 25 cm2 | 29.7×42 | |
2.铜箔厚度∶20-50μm Thickness of Cu foil: 20-50 μm | |||
3.石墨烯覆盖度∶>99% Coverage: > 99% | |||
4.石墨烯单层率∶>90% Monolayer rate: > 90% | |||
5.石墨烯最大畴区尺寸∶500 μm Maximum grain size: 500 μm | |||
6.面电阻∶300-500Ω/sq（SiO2/Si衬底） Sheet resistance on SiO2/Si substrate: 300-500 Ω/sq | |||
| Cu-P9 | 1.最大铜单晶畴区尺寸Cuds∶9cm²<Cuds<25cm2 Highest Cu grain sizes Cuds：9 cm2 < Cuds< 25 cm2 | 29.7×42 | |
2.铜箔厚度∶20-50 μm Thickness of Cu foil: 20-50 μm | |||
3.石墨烯覆盖度∶>99% Coverage: > 99% | |||
4.石墨烯单层率∶>90% Monolayer rate: > 90% | |||
5.石墨烯最大畴区尺寸∶500μm Maximum grain size: 500 μm | |||
6.面电阻∶300-500 Ω/sq（SiO2/Si衬底） Sheet resistance on SiO2/Si substrate: 300-500 Ω/sq | |||
| Cu-P1 | 1.铜单晶畴区尺寸Cu∶Cuds<9cm² Cu grain sizes Cuds：Cuds < 9 cm2 | 2×2 | |
2.铜范厚度∶20-50μm Thickness of Cu foil: 20-50 μm | 5×5 | ||
3.石墨烯覆盖度∶>99% Coverage: > 99% | 10×10 | ||
4.石墨烯单层率∶>90% Monolayer rate: > 90% | 21×29.7 | ||
5.石墨烯最大畴区尺寸∶500μm Maximum grain size: 500 μm | 29.7×42 | ||
6.面电阻∶300-500Ω/sq（SiO2/S衬底） Sheet resistance on SiO2/Si substrate: 300-500 Ω/sq | |||
| Cu-P0 | 1.铜箔厚度∶25μm Thickness of Cu foil: 25 μm | 19.5cm（宽幅） | |
2.石墨烯覆盖度∶>99% Coverage: > 99% | |||
3.石墨烯单层率∶～90% Monolayer rate: ~ 90% | |||
4.石墨烯最大畴区尺寸∶30μm Maximum grain size: 30 μm | |||
5.面电阻∶400-600 Ω/sq（SiO2/Si衬底） Sheet resistance on SiO2/Si substrate: 400-600 Ω/sq |
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